sep.2000 type name voltage class f 5.0 max 4.4 5.0 max 12.5 min 3.9 max 1.3 1.25 1.25 circumscribe circle f 0.7 1 3 2 outline drawing dimensions in mm jedec : to-92 2 1 3 1
2
3 cathode anode gate mitsubishi semiconductor thyristor ? cr04am low power use glass passivation type cr04am application ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage ] 1 dc off-state voltage ] 1 voltage class unit v v v v v maximum ratings 8 400 500 320 400 320 12 600 720 480 600 480 ?i t (av) ........................................................................ 0.4a ?v drm ..............................................................400v/600v ?i gt ......................................................................... 100 m a symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t a =54 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c g ratings 0.63 0.4 10 0.4 0.5 0.1 6 6 0.3 C40 ~ +125 C40 ~ +125 0.23 ] 1. with gate-to-cathode resistance r gk =1k w
sep.2000 3v dc i gs i gt 6v dc 60 w v gt 2 1 tut 1k w r gk a3 a2 v1 a1 switch 1 : i gt measurement switch 2 : v gt measurement (inner resistance of voltage meter is about 1k w ) ] 3. i gt , v gt measurement circuit. switch mitsubishi semiconductor thyristor ? cr04am low power use glass passivation type electrical characteristics test conditions t j =125 c, v rrm applied t j =125 c, v drm applied, r gk =1k w t a =25 c, i tm =1.2a, instantaneous value t a =25 c, v d =6v, i t =0.1a ] 3 t j =125 c, v d =1/2v drm , r gk =1k w t j =25 c, v d =6v, i t =0.1a ] 3 t j =25 c, v d =12v, r gk =1k w junction to ambient unit ma ma v v v m a ma c/w typ. 1.5 symbol i rrm i drm v tm v gt v gd i gt i h r th (j-a) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current holding current thermal resistance ] 2. if special values of i gt are required, choose at least two items from those listed in the table below. (example: ab, bc) b 20 ~ 50 c 40 ~ 100 item i gt ( m a) a 1 ~ 30 the above values do not include the current flowing through the 1k w resistance between the gate and cathode. limits min. 0.2 1 max. 0.5 0.5 1.2 0.8 100 ] 2 3 150 performance curves 10 0 23 5710 1 4 2 23 5710 2 44 6 8 10 3 1 5 7 9 0 5 01 4 23 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t a = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
sep.2000 mitsubishi semiconductor thyristor ? cr04am low power use glass passivation type 10 2 10 ? 10 0 10 1 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 10 1 23 57 10 2 23 57 23 10 ? v fgm = 6v v gt = 0.8v (t j = 25 c) i gt = 100 a (t j = 25 c) p gm = 0.5w p g(av) = 0.1w v gd = 0.2v i fgm = 0.3v 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 23 10 ? 5710 ? 23 5710 ? 23 5710 0 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 160 60 ?0 ?0 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120 ?0 ?0 20 80 0.2 0.5 0.9 060 40 100 typical example distribution 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q = 30 60 120 90 180 q 360 resistive, inductive loads natural convection 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q 360 q = 30 60 120 90 180 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/ w) time (s) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature ( c) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature ( c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate characteristics 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c)
sep.2000 mitsubishi semiconductor thyristor ? cr04am low power use glass passivation type 160 120 60 40 20 140 100 80 0 160 ?0 0 40 80 120 140 ?0 20 60 100 r gk = 1k w typical example 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q = 30 60 120 90 180 q q 360 resistive loads 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q = 30 120 180 dc 270 60 90 q 360 resistive, inductive loads natural convection 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q = 30 60 120 90 180 270 dc q 360 resistive, inductive loads 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q = 30 60 120 90 180 q q 360 resistive loads natural convection 23 10 ? 5710 0 23 5710 1 23 5710 2 0 80 100 120 40 60 20 typical example t j = 125 c maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature ( c) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature ( c) average on-state current (a) breakover voltage vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) breakover voltage ( r gk = r k w ) breakover voltage ( r gk = 1k w ) breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
sep.2000 mitsubishi semiconductor thyristor ? cr04am low power use glass passivation type 10 0 10 1 10 2 4.0 0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 23 10 0 5710 1 23 5710 2 23 5710 3 160 0 80 100 120 140 40 60 20 t j = 125 c r gk = 1k w typical example 23 10 ? 5710 0 23 5710 1 23 5710 2 500 0 300 400 100 200 10 0 23 10 ? 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v d = 100v r l = 47 w r gk = 1k w t a = 25 c typical example 40 30 15 10 5 35 25 20 0 160 0 40 80 120 140 20 60 100 v d = 50v, v r = 50v i t = 2a, r gk = 1k w typical example distribution 60 ?0 ?0 ?0 0 20 40 80 100 120 140 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? distribution holding current vs. junction temperature holding current (ma) junction temperature ( c) holding current vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) holding current ( r gk = r k w ) holding current ( r gk = 1k w ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = vv/ s ) breakover voltage ( dv/dt = 1v/ s ) turn-on time vs. gate current turn-on time ( s) gate current (ma) holding current vs. gate trigger current holding current (ma) gate trigger current ( a) turn-off time vs. junction temperature turn-off time ( s) junction temperature ( c) t j = 25 c t j = 25 c i gt (25 c) = 35 a r gk = 1k w typical example typical example i gt (25 c) i h (1k w ) # 1 25 a 0.9ma # 1
sep.2000 mitsubishi semiconductor thyristor ? cr04am low power use glass passivation type 160 120 100 40 60 20 0 160 ?0 ?0 20 80 140 120 80 140 060 40 100 10 2 10 0 10 1 24 357 10 2 24 357 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 gate trigger current vs. gate current pulse width 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) junction temperature ( c) 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25 c ) gate current pulse width ( s) t j = 25 c typical example i gt (dc) # 1 10 a # 2 65 a # 1 # 2 repetitive peak reverse voltage vs. junction temperature
|
